Category

Product Name

Applications

Description

GaAs Based LD/PD Epitaxial Wafer

● 808nm EEL EPI-WAFER

★PUMPING

★MEDICAL COSMETOLOGY

★INDUSTRIAL APPLICATION

★INFRARED LIGHTING

Typical Specifications（CW:10W，Po:10W）

Threshold Current: 1.5A

Operating Voltage:1.8V

Slope Efficiency: 1.1W/A

Beam Divergence Angle: θ∥≤10°；θ⊥≤34°

● 905nm EEL EPI-WAFER

★L(fēng)IDAR

★SECURITY APPLICATION

★MEASUREMENTS

Typical Specifications( (3 Tunnel Junctions,Pulse,Po=75W)

Threshold Current: 0.75A

Beam Divergence Angle: θ∥≤8°；θ⊥≤25°

● 915nm EEL EPI-WAFER

★PUMPING

Typical Specifications（CW:>25W）

Threshold Current: <2A

Operating Voltage:1.7V

Slope Efficiency: >1.05W/A

● 976nm EEL EPI-WAFER

★PUMPING

★MEDICAL COSMETOLOGY

★L(fēng)ASER AIMING

★L(fēng)ASER DETECTION

Typical Specifications（CW:>25W）

Threshold Current: <2A

Operating Voltage:1.7V

Slope Efficiency: >1.05W/A

● VCSEL/PIN WAFERS

★SENSING

★DATACOM

Typical Specifications

Wave: 850nm/940nm